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Van der Waals (vdW) epitaxial growth of large-area and stable two-dimensional (2D) materials of high structural quality on crystalline substrates is crucial for the development of novel device technologies. 2D gallium monochalcogenides with low in-plane symmetry stand out among the layered semiconductor materials family for next-generation optoelectronic and energy conversion applications. Here, we demonstrate the formation of large-area, single crystal and optically active 2D monoclinic gallium telluride (m-GaTe) on silicon substrate via rapid thermal annealing induced phase transformation of vdW epitaxial metastable hexagonal gallium telluride (h-GaTe). Stabilization of multilayer h-GaTe on Si occurs due to the role of the first layer symmetry together with efficient GaTe surface passivation. Moreover, we show that the phase transformation of h-GaTe to m-GaTe is accompanied by the strain relaxation …
Nature Publishing Group UK
Publication date: 
27 Mar 2023

Eugenio Zallo, Andrea Pianetti, Alexander S Prikhodko, Stefano Cecchi, Yuliya S Zaytseva, Alessandro Giuliani, Malte Kremser, Nikolai I Borgardt, Jonathan J Finley, Fabrizio Arciprete, Maurizia Palummo, Olivia Pulci, Raffaella Calarco

Biblio References: 
Volume: 7 Issue: 1 Pages: 19
npj 2D Materials and Applications