Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3. | IMM Container

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Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3.

Type:

Journal

Description:

Publisher:

Publication date:

21 Sep 2023

Authors:

A Parisini, G Sozzi, C Borelli, P Mazzolini, O Bierwagen, S Vantaggio, K Egbo, M Bosi, L Seravalli, R Fornari

Biblio References:

Volume: 15 Issue: 39 Pages: 45997-46009

Origin:

ACS Applied Materials & Interfaces

Link:

https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…