HijikataY^ et al. MOS capacitors obtained by wet oxidation of n-type 4H-SiC preimplanted with nitrogen [j] | IMM Container

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HijikataY^ et al. MOS capacitors obtained by wet oxidation of n-type 4H-SiC preimplanted with nitrogen [j]

Type:

Journal

Description:

Publisher:

Publication date:

1 Jan 2007

Authors:

Poggi Af MoscatelliF

Biblio References:

Volume: 84 Issue: 12 Pages: 2804-2809

Origin:

Microelectronic Engineering

Link:

https://scholar.google.com/scholar?cluster=15190766487311951251&hl=en&oi=scholar…