Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures

Authors: 

N Piluso, R Anzalone, M Camarda, A Severino, A La Magna, G D'Arrigo, F La Via

Breakdown kinetics at nanometer scale of innovative MOS devices by conductive atomic force microscopy

Authors: 

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Dario Salinas

Atomic-Scale Analysis of Chemical Bonding of Delaminated Graphene at Faceted SiC by Aberration-Corrected Scanning Transmission Electron Microscopy

Authors: 

G Nicotra, QM Ramasse, I Deretzis, C Bongiorno, C Spinella, F Giannazzo

Solution processed pentacene thin films: new routes for building-up plastic field effect transistors

Authors: 

C Musumeci, D Spina, S Cataldo, A Scandurra, C Bongiorno, S Ravesi, B Pignataro

SENSING ELEMENT FOR GLUCOSE BIOSENSOR

Authors: 

M FICHERA, F GIANNAZZO, S LIBERTINO, F SINATRA

Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys

Authors: 

S Gaiaschi, R Ruggeri, ME Gueunier-Farret, EV Johnson

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC

Authors: 

M Vivona, G Greco, F Giannazzo, R Lo Nigro, S Rascunà, M Saggio, F Roccaforte

Insulator-metal transition in biased finite polyyne systems

Authors: 

Antonino La Magna, Ioannis Deretzis, Vittorio Privitera

On the viability of Au/3C-SiC Schottky barrier diodes

Authors: 

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Stefano Leone, Vito Raineri

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Authors: 

Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, Alessia Frazzetto, Simona Lorenti, Mario S Alessandrino, Fabrizio Roccaforte

Pages