Capacitance study of thin film SnO2: F/p-type a-Si: H heterojunctions

Authors: 

G Cannella, F Principato, M Foti, C Garozzo, S Lombardo

Mechanism of de-activation and clustering of B in Si at extremely high concentration

Authors: 

L Romano, AM Piro, V Privitera, E Rimini, G Fortunato, BG Svensson, M Foad, MG Grimaldi

Multiband double junction photodiode and related manufacturing process

Authors: 

Massimo Cataldo Mazzillo, Antonella Sciuto, Dario Sutera, , Dario Sutera

Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Authors: 

A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via

Morphological and structural control of nanostructured oriented CeO 2 films grown on random metallic substrates

Authors: 

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà

Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C

Authors: 

F Giannazzo, F Roccaforte, V Raineri

Amorphous-to-fcc Transition in GeSbTe Alloys

Authors: 

S Privitera, C Bongiorno, E Rimini, R Zonca

Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy

Authors: 

F Giannazzo, V Raineri, S Mirabella, G Impellizzeri, F Priolo, M Fedele, R Mucciato

Effects of implantation defects on the carrier concentration of 6H-SiC

Authors: 

A Ruggiero, S Libertino, F Roccaforte, F La Via, L Calcagno

Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers

Authors: 

M Vivona, P Fiorenza, T Sledziewski, M Krieger, T Chassagne, M Zielinski, F Roccaforte

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