Fluxgate magnetic sensor and front-end circuitry in a micro-integrated system

Authors: 

A Baschirotto, F Borghetti, E Dallago, P Malcovati, M Marchesi, E Melissano, G Venchi, P Siciliano

Aging effects in pentacene thin-film transistors: Analysis of the density of states modification

Authors: 

F De Angelis, S Cipolloni, L Mariucci, G Fortunato

Improved Performance of In0. 53Ga0. 47As-Based Metal–Oxide–Semiconductor Capacitors with Al: ZrO2 Gate Dielectric Grown by Atomic Layer Deposition

Authors: 

Alessandro Molle, Luca Lamagna, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, Clement Merckling, Guy Brammertz, Matty Caymax

[(Me3Si) 2N] 3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films

Authors: 

G Scarel, C Wiemer, M Fanciulli, IL Fedushkin, GK Fukin, GA Domrachev, Y Lebedinskii, A Zenkevich, G Pavia

Evidence of trigonal dangling bonds at the Ge (111)/Oxide interface by electrically detected magnetic resonance

Authors: 

Stefano Paleari, Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Process for physical vapor deposition of a chalcogenide material layer and chamber for physical vapor deposition of a chalcogenide material layer of a phase change memory device

Authors: 

Maria Marangon, Paola Besana, Raimondo Cecchini, Mauro Tresoldi

Terahertz polarizer on flexible and conformal substrate

Authors: 

A Ferraro, DC Zografopoulos, M Missori, M Peccianti, R Caputo, R Beccherelli

Nanoscale Characterization and Unexpected Photovoltaic Behaviour of Low Bandgap Sulfur-Overrich-Thiophene/Benzothiadiazole Decamers and Polymers

Authors: 

Francesca Di Maria, Mariano Biasiucci, Francesco Paolo Di Nicola, Eduardo Fabiano, Alberto Zanelli, Massimo Gazzano, Elisabetta Salatelli, Massimiliano Lanzi, Fabio Della Sala, Giuseppe Gigli, Giovanna Barbarella

Crystallization pathways of multicomponent oxide nanocrystals: critical role of the metal cations distribution in the case study of metal ferrites

Authors: 

Mauro Epifani, Jordi Arbiol, Teresa Andreu, Joan R Morante

Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

Authors: 

L Maiolo, A Pecora, G Fortunato, ND Young

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