Interfacing Graphene with III-Nitrides for Power Device Applications

Authors: 

Rositsa Yakimova, Andras Kovacs, Anelia Kakanakova, Filippo Giannazzo, Bela Pecz

Effect of different atmospheric and subatmospheric cooking techniques on qualitative properties and microstructure of artichoke heads

Authors: 

Massimiliano Rinaldi, Paola Littardi, Antonella Cavazza, Saverio Santi, Maria Grimaldi, Margherita Rodolfi, Tommaso Ganino, Emma Chiavaro

Engineering Aspheric Liquid Crystal Lenses by Using the Transmission Electrode Technique

Authors: 

José Francisco Algorri, Dimitrios C Zografopoulos, Luis Rodríguez-Cobo, José Manuel Sánchez-Pena, José Miguel López-Higuera

Electroless Deposited IrOx Nanoparticles for Ni Foam Functionalization with Low Iridium Loading

Authors: 

Rachela Gabriella Milazzo, Stefania MS Privitera, Silvia Scalese, Francesca Monforte, Guglielmo Guido Condorelli, Salvatore Lombardo

Superior Doped Olivine Cathodes for Fast Charge/Discharge Lithium Batteries

Authors: 

Vito Di Noto, Gioele Pagot, Marco Bandiera, Keti Vezzù, Federico Brombin, Angeloclaudio Nale, Giovanni Crivellaro, Andrea Migliori, Renzo Bertoncello, Vittorio Morandi, Enrico Negro

Advances in Silicon Nanophotonics

Authors: 

Giorgia Franzó, Alessia Irrera, Maria Miritello, Simona Boninelli, Fabio Iacona, Francesco Priolo

Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

Authors: 

Anelia Kakanakova, Gueorgui K Gueorguiev, Davide G Sangiovanni, Nattamon Suwannaharn, Ivan G Ivanov, Ildikó Cora, Béla Pécz, Giuseppe Nicotra, Filippo Giannazzo

Flexible Sensors Based on Low-Temperature Polycrystalline Silicon Thin Film Transistor Technology

Authors: 

Guglielmo Fortunato, Luca Maiolo, Francesco Maita, Antonio Minotti, Salvo Mirabella, Vicky Strano, Giorgio Metta, Davide Ricci, Alessandro Pecora

Analog Hfox-Rram Switches for Neural Networks

Authors: 

Sabina Spiga, Brivio Stefano, Erika Covi, Marco Fanciulli, Alexander Serb, Themis Prodromakis, Hesham Mostafa, Giacomo Indiveri

Thermal Stability of 1× 1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature≥ 1850° C

Authors: 

Roberta Nipoti, Mariaconcetta Canino, Maurizio Puzzanghera, Giovanna Sozzi

Pages