Improved Electrical and Structural Stability in HTL-Free Perovskite Solar Cells by Vacuum Curing Treatment

Authors: 

Salvatore Valastro, Emanuele Smecca, Salvatore Sanzaro, Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Youhei Numata, Ajay Kumar Jena, Tsutomu Miyasaka, Antonio Gagliano, Alessandra Alberti

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices

Authors: 

Fabrizio Roccaforte, Michael Leszczynski

A Wireless Sensor Network based on Laser-annealed ZnO Nanostructures for Advance Monitoring in Precise Agriculture

Authors: 

Davide Polese, Francesco Maita, Ivano Lucarini, Antonio Ferraro, Antonio De Luca, Domenico Cannatà, Luca Maiolo

4H-SiC MOSFET Source and Body Laser Annealing Process

Authors: 

Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Authors: 

E Schilirò, R Lo Nigro, SE Panasci, FM Gelardi, S Agnello, Rositsa Yakimova, F Roccaforte, F Giannazzo

Phonon anharmonicities and ultrafast dynamics in epitaxial Sb 2 Te 3

Authors: 

V Bragaglia, M Ramsteiner, D Schick, JE Boschker, R Mitzner, R Calarco, K Holldack

Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

Authors: 

Hemi H Gandhi, David Pastor, Tuan T Tran, Stefan Kalchmair, Lachlan A Smillie, Jonathan P Mailoa, Ruggero Milazzo, Enrico Napolitani, Marko Loncar, James S Williams, Michael J Aziz, Eric Mazur

3× 1018-1× 1019 cm-3 Al+ ion implanted 4H-SiC: annealing time effect

Authors: 

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Mariaconcetta Canino, Michele Sanmartin, Giovanni Alfieri

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

Authors: 

Patrick Fiorenza, Mario Alessandrino, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Edoardo Zanetti, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time

Authors: 

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Marco Gorni, Mariaconcetta Canino, Giulio Pizzochero, Massimo Camarda, Judith Woerle, Ulrike Grossner

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