4H-SiC Defects Analysis by Micro Raman Spectroscopy

Authors: 

Nicolo’ Piluso, Massimo Camarda, Ruggero Anzalone, Francesco La Via

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

Authors: 

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers

Authors: 

Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

Innovative spongy TiO2 layers for gas detection at low working temperature

Authors: 

A Alberti, L Renna, S Sanzaro, E Smecca, G Mannino, C Bongiorno, C Galati, L Gervasi, A Santangelo, A La Magna

Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates

Authors: 

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

Multi-objective optimization and analysis for the design space exploration of analog circuits and solar cells

Authors: 

Andrea Patanè, Andrea Santoro, Piero Conca, Giovanni Carapezza, Antonino La Magna, Vittorio Romano, Giuseppe Nicosia

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

Authors: 

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Ab initio prediction of boron compounds arising from borozene: structural and electronic properties

Authors: 

G Forte, A La Magna, I Deretzis, R Pucci

ELECTRONIC TRANSPORT CALCULATION OF FINITE SINGLE-WALLED CARBON NANOTUBE SYSTEMS IN THE TWO-TERMINAL GEOMETRY

Authors: 

A LA MAGNA, I DERETZIS

Defects induced anomalous breakdown kinetics in Pr2O3 by micro-and nano-characterization

Authors: 

Patrick Fiorenza, R Lo Nigro, Vito Raineri, Salvatore Lombardo, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà

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