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Graphene integration with nitride semiconductors for high power and high frequency electronics

F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon, Y. Cordier

Physica Status Solidi A (2016) – Feature Article  

First published: 17 October 2016

DOI: 10.1002/pssa.201600460




Group III nitride semiconductors (III-N), including GaN, AlN, InN, and their alloys, are currently the materials of choice for many applications in optoelectronics (light-emitting diodes, laser diodes), and high-power and high-frequency transistors. Due to its attractive electrical, optical, mechanical, and thermal properties, graphene (Gr) integration with III-N technology has been considered in the last few years, in order to address some of the major issues which still limit the performances of GaN-based devices. To date, most of the studies have been focused on the use of Gr as transparent conductive electrode (TCE) to improve current spreading from top electrodes and light extraction in GaN-LEDs. This paper will review recent works evaluating the benefits of Gr integration with III-N for high power and high frequency electronics. From the materials side, recent progresses in the growth of high quality GaN layers on Gr templates and in the deposition of Gr on III-N substrates and templates will be presented. From the applications side, strategies to use Gr for thermal management in high-power AlGaN/GaN transistors will be discussed. Finally, recent proposals of implementing new ultra-high-frequency (THz) transistors, such as the Gr base hot electron transistor (GBHET), by Gr integration with III-N will be highlighted.

This paper has been partially supported by the FLAG-ERA European projects GraNitE and GRIFONE.