Dear Colleagues,

This Special Issue will welcome high quality experimental and modeling studies on the recent developments in advanced semiconductor doping techniques. The list of key topics is reported in the following:

• Different Substrates (Si, SiC, Ge, SiGe, InGaAs, GaP, organic materials...)
• Doping Technologies and Processes: Ion Implantation, Plasma Doping, Molecular, Gas and Solid Doping.
• Annealing Technologies and Processes: Rapid Thermal Processing, Laser Annealing, Flash Annealing, SPE, Silicide, Contact and Dielectric Formation, Lattice Damage and Defect
• Device Applications: CMOS, Memory, Power (SiC, GaN), RF-SOI, Image Sensors, IoT Devices, Photovoltaics, III-V Devices
• Metrologies: Chemical, Physical and Electrical Characterization of 2D and 3D Structures
• Modeling and Simulations (from ab-initio to TCAD) of all of the above.

More information at: https://www.mdpi.com/journal/micro/special_issues/Semiconductors

Deadline: February 28, 2022

Dr. Rosaria A. Puglisi
Prof. Dr. Jost Adam
Dr. Ray Duffy
Guest Editors