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This chapter reviews the proposed bottom‐up approaches for the fabrication of resistive random access memory (ReRAM) devices, their resistive switching properties, and possible array configurations. It presents the resistive switching properties and mechanism of ReRAM cells based on single all‐oxide nanowires (NWs) and nanodots, segmented metal‐insulator‐metal (MIM) NWs, and core/shell NWs. The most widely used techniques in the framework of resistive switching devices are vapor‐liquid‐solid (VLS) and template‐assisted fabrication methods. Resistive switching in single all‐oxide NWs is mainly based on nickel oxide and zinc oxide materials, with NW length up to tens of micrometers and with NW diameter in the 20‐200nm range. Heterostructured NWs in the axial direction, such as for instance segmented metal‐oxide‐metal (MOM), have been proposed as prototypical ReRAM memory cells. The …
Wiley‐VCH Verlag GmbH & Co. KGaA
Publication date: 
22 Jun 2016

Sabina Spiga, Takeshi Yanagida, Tomoji Kawai

Biblio References: 
Pages: 661-694
Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications