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Thin ZrNx films have been prepared by reactive radio frequency magnetron sputtering. The radio frequency power has been chosen as a sputtering parameter and the effect on the compositional and optical properties of the films was systematically studied. The films have been analyzed by X-ray photoelectron spectroscopy. The reflectance and transmittance of the samples have been recorded by a spectrophotometer in the UV–Vis–IR range. The effects of the different powers (in the range 100–400 W) on the stoichiometry of ZrNx films have been studied. The components revealed on N 1s photoelectron peaks were correlated with different bounding states for the zirconium nitride. The threshold power value between N-rich ZrNx films and Zr-rich ZrNx ones is 270 W. A correlation has been observed between the optical properties and the stoichiometry of the films. In fact, the samples catalogued as N-rich by X-ray …
Publication date: 
5 Dec 2006

A Rizzo, MA Signore, L Mirenghi, D Dimaio

Biblio References: 
Volume: 515 Issue: 4 Pages: 1486-1493
Thin solid films