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To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO2/Ge as materials model system. It appears that a completely interface layer free HfO2/Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGey (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeOx interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO2 layer is …
Publication date: 
15 Dec 2006

Matty Caymax, Sven Van Elshocht, Michel Houssa, Annelies Delabie, Thierry Conard, Marc Meuris, MM Heyns, A Dimoulas, S Spiga, M Fanciulli, Jin Won Seo, LV Goncharova

Biblio References: 
Volume: 135 Issue: 3 Pages: 256-260
Materials Science and Engineering: B