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The determination of the valence band offset (VBO) by x-ray photoelectron spectroscopy (XPS) is commonly performed using the so-called Kraut’s method that was developed for VBO determination in semiconductor/semiconductor heterojunctions. Although the physical model, which is the basis of the method, can be safely extended to dielectric/semiconductor (D/S) heterojunctions, in these systems a careful evaluation of the experimental results is necessary due to the differential charging phenomena originating at D/S interface during x-ray bombardment. As a consequence, precise determination of the VBO requires an accurate calibration of the energy scale in order to remove artifacts induced by the progressive charging of the oxide during the XPS measurement. In this work a detailed analysis of the band alignment between e-beam evaporated amorphous HfO2 films and Si substrates is reported. The HfO2/Si …
Publication date: 
1 Sep 2011
Biblio References: 
Volume: 110 Issue: 5 Pages: 053711
Journal of Applied Physics