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We report on zinc oxide thin films grown by atomic layer deposition at a low temperature, which is compatible with a low thermal budget required for some novel electronic devices. By selecting appropriate precursors and process parameters, we were able to obtain films with controllable electrical parameters, from heavily n-type to the resistive ones. Optimization of the growth process together with the low temperature deposition led to ZnO thin films, in which no defect-related photoluminescence bands are observed. Such films show anticorrelation between mobility and free-electron concentration, which indicates that low n electron concentration is a result of lower number of defects rather than the self-compensation effect.
American Institute of Physics
Publication date: 
15 Jun 2009

E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, K Kopalko, A Wójcik-Głodowska, E Przeździecka, W Paszkowicz, E Łusakowska, P Kruszewski, N Huby, G Tallarida, S Ferrari

Biblio References: 
Volume: 105 Issue: 12 Pages: 122413
Journal of Applied Physics