The structural and electronic properties of a Si nanosheet (NS) grown onto a MoS 2 substrate by means of molecular beam epitaxy are assessed. Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice of MoS 2 by forming two‐dimensional nanodomains. The Si layer structure is distinguished from the underlying MoS 2 surface structure. The local electronic properties of the Si nanosheet are dictated by the atomistic arrangement of the layer and unlike the MoS 2 hosting substrate they are qualified by a gap‐less density of states.