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Type: 
Conference
Description: 
In this paper we show for the 1st time that Silicon nanocrystal (Si-ncs) memories with high-k (HfO2, Al2O3and HfAlO) interpoly dielectrics (IPD) can offer excellent behaviour in the Fowler-Nordheim regime, with great relevance for future sub-45 nm NAND memory generations. We significantly advance the state-of-the-art by showing a strict correlation between the different IPD properties and the performance obtained on memory transistors down to 90 nm gate lengths. In particular the results demonstrate that HfAlO IPDs combine the fast p/e and good 105 cycles endurance behaviour of HfO2and the long retention of Al2O3with no activation up to 125degC Then, in order to boost the memory window, we also integrated a hybrid Si-nc/SiN layer floating gate, with a HfAlO based IPD. It is shown that a 6V DeltaVthcan be achieved, with good retention and cycling behaviours.
Publisher: 
IEEE
Publication date: 
10 Dec 2007
Authors: 

G Molas, Marc Bocquet, J Buckley, JP Colonna, L Masarotto, H Grampeix, F Martin, V Vidal, A Toffoli, P Brianceau, L Vermande, P Scheiblin, M Gely, AM Papon, G Auvert, L Perniola, C Licitra, T Veyron, N Rochat, C Bongiorno, S Lombardo, B De Salvo, S Deleonibus

Biblio References: 
Pages: 453-456
Origin: 
2007 IEEE International Electron Devices Meeting