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To understand the impact that the growth rate has on the residual stress of chemical vapor deposition-grown 3C–SiC heteroepitaxial films on Si substrates, growth experiments were performed. The film thickness was held constant at; 2.5 lm independent of the growth rate so as to allow for direct film comparison as a function of the growth rate. Stress analysis performed by profilometer curvature measurement, livqo-Raman shift analysis and micro-machined freestanding structures, show an apparent disagreement about the stress nature. This incongruity between the experimental data can be explained assuming a strong stress field located in the substrate related to defects generated in the silicon during the growth process.
Cambridge University Press
Publication date: 
14 Jan 2013

Ruggero Anzalone, Massimo Camarda, Christopher Locke, Josè Carballo, Nicolò Piluso, Antonino La Magna, Alex A Volinsky, Stephen E Saddow, Francesco La Via

Biblio References: 
Volume: 28 Issue: 1 Pages: 129
Journal of Materials Research