-A A +A
The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 µm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2009

Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa

Biblio References: 
Volume: 615 Pages: 55-60
Materials Science Forum