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In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. In particular it has been observed that a reduction of the source ion implanted dose produces a large reduction of point defects in the source region and a considerable improvement of the electrical characteristic of the DIMOSFET.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2016

Enzo Fontana, Nicolò Piluso, Alfio Russo, Simona Lorenti, Cinzia M Marcellino, Salvo Coffa, Francesco La Via

Biblio References: 
Volume: 858 Pages: 418-421
Materials Science Forum