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The growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.
Cambridge University Press
Publication date: 
1 Jan 2006

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

Biblio References: 
Volume: 911
MRS Online Proceedings Library Archive