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Atomic-resolution structural and spectroscopic characterization techniques (scanning transmission electron microscopy and electron energy loss spectroscopy) are combined with nanoscale electrical measurements (conductive atomic force microscopy) to study at the atomic scale the properties of graphene grown epitaxially through the controlled graphitization of a hexagonal SiC(0001) substrate by high temperature annealing. This growth technique is known to result in a pronounced electron-doping (∼1013 cm–2) of graphene, which is thought to originate from an interface carbon buffer layer strongly bound to the substrate. The scanning transmission electron microscopy analysis, carried out at an energy below the knock-on threshold for carbon to ensure no damage is imparted to the film by the electron beam, demonstrates that the buffer layer present on the planar SiC(0001) face delaminates from it on the …
American Chemical Society
Publication date: 
23 Apr 2013

Giuseppe Nicotra, Quentin M Ramasse, Ioannis Deretzis, Antonino La Magna, Corrado Spinella, Filippo Giannazzo

Biblio References: 
Volume: 7 Issue: 4 Pages: 3045-3052
ACS nano