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In this paper, the conduction mechanisms in Si/SiO2/PrxSiyOz/Pr2O3/Au metal-insulator-semiconductor capacitors have been investigated. The dielectric stack has been produced by metal-organic chemical-vapor deposition. Nanoscopic and microscopic capacitance properties have been correlated. The capacitance-voltage (C-V) characteristics of 25-μm-radius metal-oxide-semiconductor capacitors have been evaluated and compared to the measurements performed by scanning capacitance microscopy (SCM). The study of the SCM images allows us to confirm the value of interface state density (Dit≈1012cm−2eV−1) obtained by C-V investigation excluding any defect or grain-boundary contribution in the capacitance phenomena. The conduction mechanisms have been investigated by current-density–voltage (J-V) measurements performed at different temperatures (from 100 to 200 °C). At low electric fields, a …
American Institute of Physics
Publication date: 
15 Aug 2005

P Fiorenza, R Lo Nigro, V Raineri, S Lombardo, RG Toro, G Malandrino, IL Fragalà

Biblio References: 
Volume: 98 Issue: 4 Pages: 044312
Journal of applied physics