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Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewThis paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC (000-1) by thermal treatments at high temperatures (from 1850 to 1950 C) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy shoed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr growth on the C-face of SiC under these annealing conditions and the role of this disordered layer in the suppression of epitaxy between Gr and the substrate have been …
Publisher: 
Trans Tech Publications
Publication date: 
1 Jan 2016
Authors: 

Filippo Giannazzo, Giuseppe Nicotra, Ioannis Deretzis, Aurora Piazza, Gabriele Fisichella, S Agnello, Corrado Spinella, Antonino La Magna, Fabrizio Roccaforte, Rositza Yakimova

Biblio References: 
Volume: 858 Pages: 1129-1132
Origin: 
Materials Science Forum