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We have developed and investigated the quasi-bulk crystal growth of 3C-SiC on transferred, high quality, CVD-grown templates using a sublimation sandwich related technique. The seeding layers were removed from the silicon carrier using a solution of hydrogen fluoride, nitric acid and water and glued to a substrate using carbon glue. The transferred layers were used as seeding material to grow high quality, single crystalline, DPBs free 3C-SiC crystals with thicknesses of up to 860 μm and a size of 18 x 20 mm. Analysis of the 3C-SiC layers was carried out using Laue measurement in back-reflecting geometry, Raman spectroscopy and optical microscopy.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2016

Philipp Schuh, Philipp Vecera, Andreas Hirsch, Mikael Syväjärvi, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

Biblio References: 
Volume: 858 Pages: 89-92
Materials Science Forum