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In this paper, different Hf-based oxides (HfO 2 , HfSiO under several annealing conditions, HfSiON, HfAlO with various compositions) are simultaneously considered as storage layers of charge-trap memories. Based on material characterization analyses, electrical data of memory cells, physical modeling of charge-trap devices, we show that a strict relationship exists between the crystal structure of the storage layer and the memory performances. The obtained results clearly demonstrate the high interest of HfO 2 dielectric as possible storage layer of future NROM-like memory devices
Publication date: 
11 Dec 2006

J Buckley, M Bocquet, G Molas, M Gely, P Brianceau, N Rochat, E Martinez, F Martin, H Grampeix, JP Colonna, A Toffoli, V Vidal, C Leroux, G Ghibaudo, G Pananakakis, C Bongiorno, D Corso, S Lombardo, B DeSalvo, S Deleonibus

Biblio References: 
Pages: 1-4
2006 International Electron Devices Meeting