Through comparison with a large data set, we show that progressive breakdown (PBD) of gate oxides is described by a physical model coupling carrier energy dissipation to electromigration producing the PBD growth. Dependence on temperature, voltage, carrier type, oxide thickness, and the statistics are well described in a consistent framework.
3 Dec 2016
Pages: 31.6. 1-31.6. 4
2016 IEEE International Electron Devices Meeting (IEDM)