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Type: 
Conference
Description: 
Through comparison with a large data set, we show that progressive breakdown (PBD) of gate oxides is described by a physical model coupling carrier energy dissipation to electromigration producing the PBD growth. Dependence on temperature, voltage, carrier type, oxide thickness, and the statistics are well described in a consistent framework.
Publisher: 
IEEE
Publication date: 
3 Dec 2016
Authors: 

S Lombardo, E Wu, J Stathis

Biblio References: 
Pages: 31.6. 1-31.6. 4
Origin: 
2016 IEEE International Electron Devices Meeting (IEDM)