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In the quest of new p-type dopants for Si, indium represents a promising candidate for its low diffusivity even if it presents a very low solubility and a very deep acceptor state. It has been recently shown that by co-doping In implanted Si with C, a shallower state forms related to In–C complexes. In this contribution we investigate the effect of C co-implantation on the In local configuration for In concentration higher than the solid solubility limit in Si. We find evidence that C has the property of preventing the formation of In clusters by binding In also at high concentrations. This interaction has a clear effect on the dopant concentration profile and on electrical properties of the material.
Publication date: 
1 Dec 2006

F d’Acapito, Y Shimizu, S Scalese, M Italia, P Alippi, S Grasso

Biblio References: 
Volume: 253 Issue: 1-2 Pages: 59-62
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms