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We present an enthalpy-based model for pulsed excimer laser annealing of crystalline silicon in the melting regime that integrates into the technology computer-aided design (TCAD) suite Sentaurus Process of Synopsys. The currently one-dimensional model includes laser absorption, a transient simulation of the heat flux, melting of the surface layer, and undercooling during recrystallization. To verify the model, its predictions for a laser pulse with a duration of ∼150 ns and a wavelength of 308 nm were compared to those of a phase-field implementation of melting laser annealing by La Magna et al. The two models show a good agreement for the melt depth, melt duration, and melt front dynamics. In a second step, model predictions were compared to melt depths extracted from SIMS measurements of ion implanted and excimer-laser-annealed silicon samples. They were found to agree within the experimental …
Publication date: 
15 Sep 2012

M Hackenberg, P Pichler, K Huet, R Negru, J Venturini, A Pakfar, C Tavernier, A La Magna

Biblio References: 
Volume: 258 Issue: 23 Pages: 9347-9351
Applied surface science