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The p-type doping of high purity semi-insulating 4H polytype silicon carbide (HPSI 4H-SiC) by aluminum ion (Al+) implantation has been studied in the range of 1 Â 1019 to 8 Â 1020/cm3 (0.39 lm implanted thickness) and a conventional thermal annealing of 1950 C/5 min. Implanted 4H-SiC layers of p-type conductivity and sheet resistance in the range of 1.6 Â 104 to 8.9 Â102 Xu, corresponding to a resistivity in the range of 4.7 Â 10 À1 to 2.7 Â 10 À2 X cm have been obtained. Hall carrier density and mobility data in the temperature range of 140–720 K feature the transition from a valence band to an intraband conduction for increasing implanted Al ion concentration from 1 Â 1019/cm3 to 4 Â 1020/cm3. A 73% electrical activation, 31% compensation and 146 meV ionization level have been obtained using a best-fit solution of the neutrality equation to Hall carrier data for the lowest concentration.
Cambridge University Press
Publication date: 
14 Jan 2013

Roberta Nipoti, Raffaele Scaburri, Anders Hallén, Antonella Parisini

Biblio References: 
Volume: 28 Issue: 1 Pages: 17
Journal of Materials Research