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We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k·p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X C excitonic transition.PACS: 78.55.Cr, 77.22.Ej, 81.07.Gf.
Springer New York
Publication date: 
1 Dec 2011

Gwenole Jacopin, Lorenzo Rigutti, Andres De Luna Bugallo, François Henry Julien, Camilla Baratto, Elisabetta Comini, Matteo Ferroni, Maria Tchernycheva

Biblio References: 
Volume: 6 Issue: 1 Pages: 501
Nanoscale research letters