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Basal Plane Dislocations (BPD) were reduced in 4H-SiC epilayers by high temperature annealing in the range of 1600 C to 1950 C using two annealing techniques. Samples annealed at> 1750 C showed almost complete elimination of BPDs propagating from the substrate. However, surface morphology was degraded for MW annealed samples above 1800 C, with new BPDs being generated from the surface. A new capping technique was developed along with application of high N 2 overpressure to preserve the surface morphology and avoid formation of new BPDs.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2014

Nadeemullah A Mahadik, Robert E Stahlbush, Anindya Nath, Marko J Tadjer, Eugene A Imhoff, Boris N Feygelson, Roberta Nipoti

Biblio References: 
Volume: 778 Pages: 324-327
Materials Science Forum