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Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewThis work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400 C and post-implantation annealing in silane ambient in a cold-wall low-pressure CVD reactor. The Al depth profile was almost box shaped with a height of 6× 1019 cm-3 and a depth of 160 nm. Implant anneals were performed in the temperature range from 1600 C to 1700 C. As the annealing temperature was increased, the silane flow rate was also increased. This annealing process yields a smooth surface with a roughness of the implanted area of 1.7-5.3 nm with increasing annealing temperature. The resistivity of the implanted layer, measured at room temperature, decreased for increasing annealing temperatures with a minimum value of 1.4 0-cm measured for the sample annealed at 1700 C. Considering only the current-voltage …
Publisher: 
Trans Tech Publications
Publication date: 
1 Jan 2006
Authors: 

Fabio Bergamini, Shailaja P Rao, Antonella Poggi, Fabrizio Tamarri, Stephen E Saddow, Roberta Nipoti

Biblio References: 
Volume: 527 Pages: 819-822
Origin: 
Materials science forum