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We show that, in scanning electron microscopy, it is possible to use the secondary electrons produced by the backscattered electrons to obtain chemical information on the dopant distribution in Sb-implanted silicon. Theoretical investigations and experimental data concur to point out that the resolution of the method is defined by the probe size—values of 1 nm or even lower are possible in the present instruments—while the contrast depends on the electron range and on the boundary conditions. A proper choice of beam energy and boundaries of the doped layer may allow a sensitivity below 1%, suitable to characterize the high-dose near-surface region of the ultrashallow junctions in cross-sectioned bulk specimens.
American Institute of Physics
Publication date: 
7 Mar 2005

PG Merli, V Morandi, G Savini, M Ferroni, G Sberveglieri

Biblio References: 
Volume: 86 Issue: 10 Pages: 101916
Applied Physics Letters