Carrier transport in Al+ implanted 4H-SiC for Al concentrations in the 5× 10 19 5× 10 20 cm-3 range and after 2000 C/30s microwave annealing are characterized. Each sample resistivity decreases with increasing temperature and attains values of about 10 2 Ωcm for temperatures> 600 K. At room temperature, resistivity decreases from 4× 10-1 Ωcm to 3× 10 2 Ωcm with the increase of implanted Al concentration. The onset of an impurity band conduction around room temperature takes place for implanted Al concentrations> 3× 10 20 cm-3. Al+ implanted and microwave annealed 4HSiC vertical p+-in diodes have shown promising forward characteristics.