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Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × 1019 cm−3 to 8 × 1020 cm−3. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of …
Springer US
Publication date: 
1 Mar 2012

R Nipoti, A Nath, SB Qadri, YL Tian, C Albonetti, A Carnera, Mulpuri V Rao

Biblio References: 
Volume: 41 Issue: 3 Pages: 457-465
Journal of electronic materials