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Type: 
Conference
Description: 
A high-performance Proportional To Absolute Temperature (PTAT) sensor based on two integrated 4H-SiC Schottky diodes is presented. The linear dependence between the voltage differences across the forward-biased diodes and the temperature, in a range from 30°C up to 300°C, has been used for thermal sensing. A high sensitivity of 5.13 mV/°C at two constant bias currents has been measured.
Publisher: 
IEEE
Publication date: 
3 Feb 2015
Authors: 

S Rao, G Pangallo, FG Della Corte, R Nipoti

Biblio References: 
Pages: 1-4
Origin: 
2015 XVIII AISEM Annual Conference