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We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasma‐enhanced chemical vapor deposition, provide good efficiency and spectral response, despite the small thickness of the Ge epilayers and a threading dislocation density as large as 107/cm2. The presence of microcracks generated by the thermal misfit is compensated by a dense collection grid that avoids insulated areas. In order to avoid the excessive shadowing introduced by the use of a dense grid, the crack density needs to be lowered. Here, we show that deep patterning of the Si substrate in blocks can be an option, provided that a continuous Ge layer is formed at the top, and it is suitably planarized before the metalorganic chemical vapor deposition. The crack density is …
Publication date: 
1 Oct 2016

Andrea Scaccabarozzi, Simona Binetti, Maurizio Acciarri, Giovanni Isella, Roberta Campesato, Gabriele Gori, Maria Cristina Casale, Fulvio Mancarella, Michael Noack, Hans von Känel, Leo Miglio

Biblio References: 
Volume: 24 Issue: 10 Pages: 1368-1377
Progress in Photovoltaics: Research and Applications