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Ordered silicon nanocrystals in silicon carbide are produced by Plasma Enhanced Chemical Vapor Deposition by means of the multilayer approach followed by annealing at 1100 °C. The crystallization is verified by Raman scattering, X-ray diffraction, Transmission Electron Microscopy, and UV–vis spectroscopy. The conditions for the periodic structure to survive the high temperature annealing and for the SiC barrier to confine the Si crystal growth are examined by energy-filtered transmission electron microscopy and X-ray reflection. The final layout appears to be strongly influenced by the structural features of the as-deposited multilayer. Threshold values of Si-rich carbide sublayer thickness and Si-to-C ratio are identified in order to preserve the ordered structure. The crystallized fraction is observed to be correlated with the total silicon volume fraction. The constraints are examined through the use of ab-initio …
Publication date: 
1 Sep 2014

C Summonte, M Allegrezza, M Bellettato, F Liscio, M Canino, A Desalvo, J López-Vidrier, S Hernández, L López-Conesa, S Estradé, F Peiró, B Garrido, P Löper, M Schnabel, S Janz, Roberto Guerra, Stefano Ossicini

Biblio References: 
Volume: 128 Pages: 138-149
Solar Energy Materials and Solar Cells