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The processing parameters which favour the onset of an impurity band conduction around room temperature with a contemporaneous elevated p-type conductivity in Al+ implanted 4H-SiC are highlighted by comparing original and literature results. In the examined cases, Al is implanted at 300–400 °C, in concentrations from below to above the Al solubility limit in 4H-SiC (2 × 1020 cm−3) and post implantation annealing temperature is ≥1950 °C. Transport measurements feature the onset of an impurity band conduction, appearing at increasing temperature for increasing Al implant dose, until this transport mechanism is enabled around room temperature. This condition appears suitable to guarantee a thermal stability of the electrical properties. In this study, the heaviest doped and less resistive samples (Al implanted concentration of 5 × 1020 cm−3 and resistivity of about 2 × 10−2 Ω cm) show a carrier …
AIP Publishing LLC
Publication date: 
21 Jul 2015

A Parisini, M Gorni, A Nath, L Belsito, Mulpuri V Rao, R Nipoti

Biblio References: 
Volume: 118 Issue: 3 Pages: 035101
Journal of Applied Physics