The growth of 3C-SiC on (001) silicon substrates by means of vapor phase epitaxy is described. The growth mechanisms are discussed with the aid of structural and morphological characterizations performed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Raman spectroscopy was used to study the residual stress. A large shift of Raman peaks with respect to the expected values for the bulk is observed and explained by the relaxation of Raman selection rules due to lattice defects. The stress and stress gradients through the film thickness are observed and studied on micrometer-sized structures such as membranes and cantilevers. Local Raman peak fluctuations are observed on millimeter-sized membranes, while cantilevers show different degrees of curling depending on film thickness.
American Chemical Society
4 Nov 2009
Volume: 9 Issue: 11 Pages: 4852-4859
Crystal growth & design