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The growth of 3C-SiC on (001) silicon substrates by means of vapor phase epitaxy is described. The growth mechanisms are discussed with the aid of structural and morphological characterizations performed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Raman spectroscopy was used to study the residual stress. A large shift of Raman peaks with respect to the expected values for the bulk is observed and explained by the relaxation of Raman selection rules due to lattice defects. The stress and stress gradients through the film thickness are observed and studied on micrometer-sized structures such as membranes and cantilevers. Local Raman peak fluctuations are observed on millimeter-sized membranes, while cantilevers show different degrees of curling depending on film thickness.
American Chemical Society
Publication date: 
4 Nov 2009

Matteo Bosi, Bernard E Watts, Giovanni Attolini, Claudio Ferrari, Cesare Frigeri, Giancarlo Salviati, Antonella Poggi, Fulvio Mancarella, Alberto Roncaglia, Oscar Martínez, Vanesa Hortelano

Biblio References: 
Volume: 9 Issue: 11 Pages: 4852-4859
Crystal growth & design