Type:
Conference
Description:
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p + -i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
Publisher:
IEEE
Publication date:
26 Jun 2014
Biblio References:
Pages: 1-4
Origin:
2014 20th International Conference on Ion Implantation Technology (IIT)