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Type: 
Conference
Description: 
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p + -i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
Publisher: 
IEEE
Publication date: 
26 Jun 2014
Authors: 

A Nath, Mulpuri V Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti

Biblio References: 
Pages: 1-4
Origin: 
2014 20th International Conference on Ion Implantation Technology (IIT)