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Type: 
Journal
Description: 
In this work, we show how the Z-contrast annular dark field scanning transmission electron microscopy technique can provide reliable dopant profiles in ultra shallow junctions in Si. Dopant profiles obtained with this technique are compared with those obtained by spectroscopic techniques like secondary ion mass spectroscopy and medium energy ion scattering.
Publisher: 
Cambridge University Press
Publication date: 
1 Jan 2007
Authors: 

Andrea Parisini, D Giubertoni, M Bersani, V Morandi, PG Merli, JA van den Berg

Biblio References: 
Volume: 1026
Origin: 
MRS Online Proceedings Library Archive