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In this letter, a near infrared all-silicon (all-Si) photodetector integrated into a silicon-on-insulator waveguide is demonstrated. The device is based on the internal photoemission effect through a metal/Si Schottky junction placed transversally to the optical field confined into the waveguide. The technological steps utilized to fabricate the device allow an efficiently monolithic integration with complementary metal-oxide semiconductor compatible structures. Preliminary results show a responsivity of 0.08 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behavior both in C and L band. Finally, an estimation of bandwidth for GHz range is deduced.
American Institute of Physics
Publication date: 
14 Jun 2010

M Casalino, L Sirleto, M Iodice, N Saffioti, M Gioffrè, I Rendina, G Coppola

Biblio References: 
Volume: 96 Issue: 24 Pages: 241112
Applied Physics Letters