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In this article, the realization and characterization of a new kind of resonant cavity enhanced photo-detector, fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported. The detector is a resonant cavity enhanced structure incorporating a Schottky diode, and its working principle is based on the internal photo-emission effect. A comparison between a Schottky diode (Al/Si or Cu/Si) and the Schottky diode fed on a high-reflectivity Bragg mirror is carried out. Considering Al as Schottky metal, no difference in responsivity is obtained; considering Cu as Schottky metal, a three-fold responsivity improvement is experimentally demonstrated.
Taylor & Francis Group
Publication date: 
17 Mar 2010

M Casalino, L Sirleto, Luigi Moretti, M Gioffrè, G Coppola, M Iodice, I Rendina

Biblio References: 
Volume: 29 Issue: 2 Pages: 85-95
Fiber and Integrated Optics