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In this paper the realization and the characterization of a resonant cavity enhanced photodetector (RCE), completely silicon compatible and working at 1.55 micron, is reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. In order to obtain a fabrication process completely compatible with standard CMOS silicon technology, a photodetector having copper (Cu) as Schottky metal has been realized. Performances devices in terms of responsivity, free spectral range, finesse are reported.
International Society for Optics and Photonics
Publication date: 
18 May 2010

M Casalino, M Gioffrè, G Coppola, M Iodice, L Moretti, I Rendina, L Sirleto

Biblio References: 
Volume: 7719 Pages: 77190R
Silicon Photonics and Photonic Integrated Circuits II