In this paper the realization and the characterization of a resonant cavity enhanced photodetector (RCE), completely silicon compatible and working at 1.55 micron, is reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. In order to obtain a fabrication process completely compatible with standard CMOS silicon technology, a photodetector having copper (Cu) as Schottky metal has been realized. Performances devices in terms of responsivity, free spectral range, finesse are reported.
International Society for Optics and Photonics
18 May 2010
Volume: 7719 Pages: 77190R
Silicon Photonics and Photonic Integrated Circuits II